HAT2166H Datasheet, PDF (1/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2166H
Silicon N Channel Power MOS FET Power Switching
REJ03G0005-0500Z
Rev.5.00
Apr.09.2003
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R_DS(on) = 2.9 mΩ typ. (at V_GS = 10 V)
Outline
LFPAK
5
D
5
1 ²³⁴
4
G
SSS
12 3
1, 2, 3 Source
4
Gate
5
Drain
Rev.5.00, Apr.09.2003, page 1 of 10