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HAT2166H Datasheet, PDF (7/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching | |||
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HAT2166H
Reverse Drain Current vs.
Source to Drain Voltage
50
40
10 V
5V
30
VGS = 0
20
10
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
100
I AP = 25 A
80
V DD = 15 V
duty < 0.1 %
Rg > 50 â¦
60
40
20
0
25 50 75 100 125 150
Channel Temperature Tch (ËC)
Vin
15 V
Avalanche Test Circuit
V DS
Monitor
Rg
50 â¦
L
I AP
Monitor
D. U. T
VDD
Avalanche Waveform
EAR =
1
2
L ⢠IAP2 â¢
VDSS
VDSS - V DD
I AP
ID
V(BR)DSS
VDS
VDD
0
Rev.5.00, Apr.09.2003, page 7 of 10
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