HAT2166H Datasheet, PDF (4/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2166H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Maximum Safe Operation Area
500
100
10
DC^P_O^W_pe=_ra1t¹_0ion^m_m^s1_s⁰⁰
10
µ_s
µ_s
1 _{Operation in}
this area is
limited by R DS(on)
0.1
Tc = 25°C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V _DS (V)
Typical Output Characteristics
50
10 V Pulse Test
2.7 V
4.5 V
40
2.6 V
30
2.5 V
20
2.4 V
10
2.3 V
V_GS = 2.2 V
0
2
4
6
8
10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
50
V _DS = 10 V
Pulse Test
40
30
20
10 _{Tc = 75°C}
25°C
-25°C
0
1
2
3
4
5
Gate to Source Voltage V GS (V)
Rev.5.00, Apr.09.2003, page 4 of 10