HAT2166H Datasheet, PDF (3/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2166H
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Symbol Min
V_(BR)DSS 30
V_(BR)GSS ± 20
I_GSS
—
I_DSS
—
V_GS(off) 1.0
R_DS(on) —
R_DS(on) —
|y_fs|
52
Ciss —
Coss —
Crss —
Rg
—
Qg
—
Qgs
—
Qgd —
t_d(on)
—
t_r
—
t_d(off)
—
t_f
—
V_DF
—
t_rr
—
Typ Max
—
—
—
—
—
± 10
—
1
—
2.5
2.9 3.8
4.0 6.1
87
—
4400 —
1000 —
330 —
0.5 —
27
—
12
—
5.9 —
12
—
35
—
55
—
7.5 —
0.83 1.08
37
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±16 V, V_DS = 0
V_DS = 30 V, V_GS = 0
V_DS = 10 V, I _D = 1 mA
I_D = 22.5 A, V_GS = 10 V ^Note4
I_D = 22.5 A, V_GS = 4.5 V ^Note4
I_D = 22.5 A, V_DS = 10 V ^Note4
V_DS = 10 V
V_GS = 0
f = 1 MHz
V_DD = 10 V
V_GS = 4.5 V
I_D = 45 A
V_GS = 10 V, I_D = 22.5 A
V_DD ≅ 10 V
R_L = 0.44 Ω
Rg = 4.7 Ω
IF = 45 A, V_GS = 0 ^Note4
IF = 45 A, V_GS = 0
diF/ dt = 100 A/ µs
Rev.5.00, Apr.09.2003, page 3 of 10