HAT2166H Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2166H
Body-Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I _DR (A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
30
VGS = 0
f = 1 MHz
10
0 5 10 15 20 25 30
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
50
20
I _D = 45 A
40
30 _VDS
V _DD = 25 V
10 V
5V
V_GS ¹⁶
12
20
8
10
V _DD = 25 V
4
10 V
5V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
1000
Switching Characteristics
300
100
t _d(off)
30
tf
t _d(on)
10
tr
3
V_GS = 10 V , V_DS = 10 V
Rg = 4.7 Ω, duty < 1 %
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I _D (A)
Rev.5.00, Apr.09.2003, page 6 of 10