H8S2138 Datasheet, PDF (721/1061 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer H8S Family/H8S/2100 Series

Section 22 ROM (H8S/2138 F-ZTAT A-Mask Version, H8S/2134 F-ZTAT A-Mask Version)
22.10.10 Notes on Memory Programming
• When programming addresses which have previously been programmed, carry out auto-
erasing before auto-programming.
• When performing programming using programmer mode on a chip that has been
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Renesas.
For other chips for which the erasure history is unknown, it is recommended that auto-
erasing be executed to check and supplement the initialization (erase) level.
2. Auto-programming should be performed once only on the same address block.
22.11 Flash Memory Programming and Erasing Precautions
Precautions concerning the use of on-board programming mode and programmer mode are
summarized below.
Use the specified voltages and timing for programming and erasing: Applied voltages in
excess of the rating can permanently damage the device. For a PROM programmer, use Renesas
Technology microcomputer device types with 128-kbyte on-chip flash memory that support a
3.3 V programming voltage.
Do not select the HN28F101 or use a programming voltage of 5.0 V for the PROM programmer,
and only use the specified socket adapter. Incorrect use will result in damaging the device.
Powering on and off: When applying or disconnecting V_CC, fix the RES pin low and place the
flash memory in the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a power
failure and subsequent recovery.
Use the recommended algorithm when programming and erasing flash memory: The
recommended algorithm enables programming and erasing to be carried out without subjecting the
device to voltage stress or sacrificing program data reliability. When setting the P or E bit in
FLMCR1, the watchdog timer should be set beforehand as a precaution against program runaway,
etc.
Do not set or clear the SWE bit during program execution in flash memory. Wait for at least
100 µs after clearing the SWE bit before executing a program or reading data in flash memory.
When the SWE bit is set, data in flash memory can be rewritten, but when SWE = 1 the flash
memory can only be read in program-verify or erase-verify mode. Flash memory should only be
Rev. 4.00 Jun 06, 2006 page 667 of 1004
REJ09B0301-0400