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| R10DS0216EJ0100 Datasheet, PDF (7/14 Pages) Renesas Technology Corp – 4Mb Advanced LPSRAM | |||
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RMLV0414E Series
Timing Waveforms
Read Cycle
A0~17
CS#
LB#,UB#
WE#
VIH
WE# = âHâ level
OE#
I/O0~15
tRC
Valid address
tAA
tACS
tCLZ *14,15
tBA
tBLZ *14,15
t *13,14,15
CHZ
tBHZ*13,14,15
tOE
High impedance
tOLZ *14,15
t *13,14,15
OHZ
tOH
Valid Data
Note
13. tCHZ, tBHZ and tOHZ are defined as the time when the I/O pins enter a high-impedance state and are not
referred to the I/O levels.
14. This parameter is sampled and not 100% tested.
15. At any given temperature and voltage condition, tCHZ max is less than tCLZ min, tBHZ max is less than tBLZ min,
and tOHZ max is less than tOLZ min, for any device.
R10DS0216EJ0100 Rev.1.00
2014.2.27
Page 7 of 12
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