R10DS0216EJ0100 Datasheet, PDF (5/14 Pages) Renesas Technology Corp – 4Mb Advanced LPSRAM

RMLV0414E Series
AC Characteristics
Test Conditions (Vcc = 2.7V ~ 3.6V, Ta = -40 ~ +85°C)
 Input pulse levels: V_IL = 0.4V, V_IH = 2.4V
 Input rise and fall time: 5ns
 Input and output timing reference level: 1.4V
 Output load: See figures (Including scope and jig)
I/O
1.4V
R_L = 500 ohm
C_L = 30 pF
Read Cycle
Parameter
Symbol
Min.
Max.
Unit
Note
Read cycle time
t_RC
45
─
ns
Address access time
t_AA
─
45
ns
Chip select access time
t_ACS
─
45
ns
Output enable to output valid
t_OE
─
22
ns
Output hold from address change
t_OH
10
─
ns
LB#, UB# access time
t_BA
─
45
ns
Chip select to output in low-Z
t_CLZ
10
─
ns
7,8
LB#, UB# enable to low-Z
t_BLZ
5
─
ns
7,8
Output enable to output in low-Z
t_OLZ
5
─
ns
7,8
Chip deselect to output in high-Z
t_CHZ
0
18
ns
7,8,9
LB#, UB# disable to high-Z
t_BHZ
0
18
ns
7,8,9
Output disable to output in high-Z
t_OHZ
0
18
ns
7,8,9
Note 7. This parameter is sampled and not 100% tested.
8. At any given temperature and voltage condition, t_CHZ max is less than t_CLZ min, t_BHZ max is less than t_BLZ min,
and t_OHZ max is less than t_OLZ min, for any device.
9. t_CHZ, t_BHZ and t_OHZ are defined as the time when the I/O pins enter a high-impedance state and are not
referred to the I/O levels.
R10DS0216EJ0100 Rev.1.00
2014.2.27
Page 5 of 12