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R10DS0216EJ0100 Datasheet, PDF (4/14 Pages) Renesas Technology Corp – 4Mb Advanced LPSRAM
RMLV0414E Series
Absolute Maximum Ratings
Parameter
Symbol
Value
unit
Power supply voltage relative to VSS
VCC
-0.5 to +4.6
V
Terminal voltage on any pin relative to VSS
VT
-0.5*2 to VCC+0.3*3
V
Power dissipation
PT
0.7
W
Operation temperature
Topr
-40 to +85
°C
Storage temperature range
Tstg
-65 to +150
°C
Storage temperature range under bias
Tbias
-40 to +85
°C
Note 2. -3.0V for pulse ≤ 30ns (full width at half maximum)
3. Maximum voltage is +4.6V.
DC Operating Conditions
Parameter
Symbol
Min.
Supply voltage
Input high voltage
Input low voltage
Ambient temperature range
VCC
2.7
VSS
0
VIH
2.2
VIL
-0.3
Ta
-40
Note 4. -3.0V for pulse ≤ 30ns (full width at half maximum)
DC Characteristics
Typ.
Max.
Unit
Note
3.0
3.6
V
0
0
V
─
VCC+0.3
V
─
0.6
V
4
─
+85
°C
Parameter
Input leakage current
Output leakage current
Operating current
Average operating current
Symbol
| ILI |
| ILO |
ICC
ICC1
ICC2
Standby current
ISB
Standby current
ISB1
Min. Typ. Max. Unit
Test conditions
─
─
1
A Vin = VSS to VCC
─
─
1
A
CS# = VIH or OE# = VIH or WE# = VIL
or LB# = UB# = VIH, VI/O = VSS to VCC
─
─
10 mA CS# = VIL, Others = VIH/VIL, II/O = 0mA
─
─
20
mA
Cycle = 55ns, duty =100%, II/O = 0mA,
CS# = VIL, Others = VIH/VIL
─
─
25
mA
Cycle = 45ns, duty =100%, II/O = 0mA,
CS# = VIL, Others = VIH/VIL
─
─
2.5
mA
Cycle =1s, duty =100%, II/O = 0mA
CS# ≤ 0.2V, VIH ≥ VCC-0.2V, VIL ≤ 0.2V
─
0.1*5 0.3 mA CS# = VIH, Others = VSS to VCC
─
0.4*5
2
A
~+25°C
Vin = VSS to VCC,
─
─
3
A
~+40°C (1) CS# ≥ VCC-0.2V or
─
─
5
A
~+70°C (2) LB# = UB# ≥ VCC-0.2V,
─
─
7
A ~+85°C
CS# ≤ 0.2V
Output high voltage
VOH
2.4
─
─
V IOH = -1mA
Output low voltage
VOH2
VOL
VCC-0.2
─
─
─
─ 0.4
V IOH = -0.1mA
V IOL = 2mA
VOL2
─
─
0.2
V IOL = 0.1mA
Note 5. Typical parameter indicates the value for the center of distribution at 3.0V (Ta=25ºC), and not 100% tested.
Capacitance
(Vcc = 2.7V ~ 3.6V, f = 1MHz, Ta = -40 ~ +85°C)
Parameter
Symbol Min. Typ. Max. Unit Test conditions
Note
Input capacitance
C in
─
─
8
pF
Vin =0V
6
Input / output capacitance
C I/O
─
─
10
pF
VI/O =0V
6
Note 6. This parameter is sampled and not 100% tested.
R10DS0216EJ0100 Rev.1.00
2014.2.27
Page 4 of 12