HN29V102414 Datasheet, PDF (7/48 Pages) Renesas Technology Corp – 1G AND type Flash Memory More than 32,113-sector (542,581,248-bit) x 2

Block Diagram
HN29V102414 Series
Upper chip
Sector
address
buffer
X-decoder
2048 + 64
32768 × (2048 + 64) × 8
memory matrix
Data register (2048 + 64)
••
I/O0
to
I/O7
•
•
• ^Multiplexer •
Data
input
buffer
•
•
Input
data
control
•
•
RDY/Busy
••
Y-gating
Y-decoder
Data
output
buffer
•••
V_CC
•
Y-address
•
counter
V_SS
CE
OE
WE
SC
RES
CDE
Control
signal
buffer
Read/Program/Erase control
Lower chip
Sector
address
buffer
X-decoder
2048 + 64
32768 × (2048 + 64) × 8
memory matrix
Data register (2048 + 64)
••
I/O0
to
I/O7
•
•
• ^Multiplexer •
Data
input
buffer
•
•
Input
data
control
•
•
RDY/Busy
••
Y-gating
Y-decoder
Data
output
buffer
•••
V_CC
•
Y-address
•
counter
V_SS
CE
OE
WE
SC
RES
CDE
Control
signal
buffer
Read/Program/Erase control
5