HN29V102414 Datasheet, PDF (21/48 Pages) Renesas Technology Corp – 1G AND type Flash Memory More than 32,113-sector (542,581,248-bit) x 2

HN29V102414 Series
DC Characteristics (V_CC = 2.7 V to 3.6 V, Ta = 0 to +70˚C)
Parameter
Symbol Min Typ Max
Unit Test conditions
Input leakage current
Output leakage current
Standby V_CC current
(1-chip operation)
I _LI
—
—2
I _LO
—
—2
I _SB1
—
0.3 1
µA
Vin = V_SS to V_CC
µA
Vout = V_SS to V_CC
mA CE = V_IH
(2-chip operation)
(1-chip operation)
(2-chip operation)
Deep standby V_CC current
(1-chip operation)
I _SB1
—
0.6 2
I _SB2
—
30 50
I _SB2
—
60 100
I _SB3
—
1
20
mA
µA CE = V_CC ± 0.2 V,
RES = V_CC ± 0.2 V
µA
µA RES = V_SS ± 0.2 V
(2-chip operation)
Operating V_CC current
(1-chip operation)
I _SB3
—
2
40
I _CC1
—
2
20
µA
mA Iout = 0 mA, f = 0.2 MHz
(2-chip operation)
I _CC1
—
4
40
(1-chip operation)
I _CC2
—
10 20
(2-chip operation)
I _CC2
—
20 40
Operating V_CC current (Program)
I _CC3
—
20 40
(1-chip operation)
mA
mA Iout = 0 mA, f = 20 MHz
mA
mA In programming
(2-chip operation)
Operating V_CC current (Erase)
(1-chip operation)
I _CC3
—
40 80
I _CC4
—
20 40
mA
mA In erase
(2-chip operation)
Input voltage
Input voltage (RES pin)
I _CC4
—
40 80
mA
V_IL
–0.3*^{1, 2} —
0.8
V
V_IH
2.0
—
V_CC + 0.3*³ V
V_ILR
–0.2 — 0.2
V
V_IHR
V_CC – —
V_CC + 0.2 V
0.2
Output voltage
V_OL
—
— 0.4
V
I_OL = 2 mA
V_OH
2.4
——
V
I_OH = –2 mA
Notes: 1. V_IL min = –1.0 V for pulse width ≤ 50 ns in the read operation. V_IL min = –2.0 V for pulse width ≤ 20
ns in the read operation.
2. V_IL min = –0.6 V for pulse width ≤ 20 ns in the erase/data programming operation.
3. V_IH max = V_CC + 1.5 V for pulse width ≤ 20 ns. If V_IH is over the specified maximum value, the
operations are not guaranteed.
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