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| HN29V102414 Datasheet, PDF (38/48 Pages) Renesas Technology Corp – 1G AND type Flash Memory More than 32,113-sector (542,581,248-bit) x 2 | |||
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HN29V102414 Series
Data Recovery Write Timing Waveform
CE
tCES
tCEH
OE
tCWC
tCWC
tCWC
tOEWS
tWPH
tWPH
tWPH
tOEPS
tCE
tOE
WE
CDE
tCDS tWP
tWP
tCDS
tWP
tWP
tCDS
SC
tSCS
I/O0 to I/O7
tCDH
tDH
tDS
tAS
tCDH
tAH
tAS
tAH
tDS
tCDH
tSCHW
tDH
tASP
tDF
RES
12H
SA(1)
SA(2)
40H
High
IO7 = VOL
RDY
/Busy
High-Z
tDB
*1
Notes: 1. Any commands,including reset command FFH, cannot be input while RDY/Busy is VOL.
2. The status returns to the standby status after RDY/Busy returns to High-Z.
tRDY
tCDS
tDF
IO7 = VOH
*2
High-Z
36
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