HN29V102414 Datasheet, PDF (3/48 Pages) Renesas Technology Corp – 1G AND type Flash Memory More than 32,113-sector (542,581,248-bit) x 2

HN29V102414 Series
1G AND type Flash Memory
More than 32,113-sector (542,581,248-bit) × 2
ADE-203-1265B (Z)
Rev. 1.0
Jan. 25, 2002
Description
The Hitachi HN29V102414 Series is a CMOS Flash Memory with AND type multi-level memory cells. It
has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29V102414 are more than 64,226 (98% of all
sector address) and less than 65,536 sectors.
Features
• On-board single power supply (V_CC): V_CC = 2.7 V to 3.6 V
• Organization
 AND Flash Memory: (2048 + 64) bytes × (More than 32,113 sectors) × 2
 Data register: (2048 + 64) bytes × 2
• Multi-level memory cell
 2 bit/per memory cell
• Automatic programming
 Sector program time: 1.0 ms (typ)
 System bus free
 Address, data latch function
 Internal automatic program verify function
 Status data polling function
• Automatic erase
 Single sector erase time: 1.0 ms (typ)
 System bus free
 Internal automatic erase verify function
 Status data polling function