HN29V102414 Datasheet, PDF (25/48 Pages) Renesas Technology Corp – 1G AND type Flash Memory More than 32,113-sector (542,581,248-bit) x 2

HN29V102414 Series
Program, Erase and Erase Verify
Parameter
Symbol Min Typ Max Unit Test conditions
Write cycle time
t _CWC
120 —
—
ns
Serial clock cycle time
t _SCC
50
—
—
ns
CE setup time
t _CES
0
—
—
ns
CE hold time
t _CEH
0
—
—
ns
Write pulse time
t _WP
60
—
—
ns
Write pulse high time
t _WPH
40
—
—
ns
Address setup time
t _AS
50
—
—
ns
Address hold time
t _AH
10
—
—
ns
Data setup time
t _DS
50
—
—
ns
Data hold time
t _DH
10
—
—
ns
OE setup time before command t_OEWS
0
write
—
—
ns
OE setup time before status
t _OEPS
40
—
—
ns
polling
OE setup time before read
t _OER
Time to device busy
t _DB
Auto erase time
t _ASE
Auto program time
t _ASP
Program(1), (3)
100 —
—
—
—
1.0
—
1.5
—
ns
150 ns
10.0 ms
20.0 ms
Program(2)
Program(4),
Data recovery write
t _ASP
—
1.0 20.0 ms
t _ASP
—
2.0 30.0 ms
WE to SC delay time
CE pulse high time
SC pulse width
SC pulse low time
Data setup time for SC
Data hold time for SC
SC setup for WE
SC setup for CE
SC hold time for WE
t _WSD
50
—
—
µs
t _CPH
200 —
—
ns
t _SP
20
—
—
ns
t _SPL
20
—
—
ns
t _SDS
0
—
—
ns
t _SDH
30
—
—
ns CDE = V_IL
t _SW
50
—
—
ns
t _SCS
0
—
—
ns
t _SCHW
20
—
—
ns
Note
23