HN29V102414 Datasheet, PDF(4/48 Page) Renesas Technology Corp – 1G AND type Flash Memory More than 32,113-sector (542,581,248-bit) x 2

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HN29V102414 Datasheet, PDF (4/48 Pages) Renesas Technology Corp – 1G AND type Flash Memory More than 32,113-sector (542,581,248-bit) x 2

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HN29V102414 Series

â¢ Erase mode

ï£§ Single sector erase ((2048 + 64) byte unit)

â¢ Fast serial read access time:

ï£§ First access time: 50 Âµs (max)

ï£§ Serial access time: 50 ns (max)

â¢ Low power dissipation:

ï£§ ICC1 = 2 mA (typ) (Read) (1-chip operation)

ICC1 = 4 mA (typ) (Read) (2-chip operation)

ï£§ ICC2 = 20 mA (max) (Read) (1-chip operation)

ICC2 = 40 mA (max) (Read) (2-chip operation)

ï£§ ISB2 = 50 ÂµA (max) (Standby) (1-chip operation)

ISB2 = 100 ÂµA (max) (Standby) (2-chip operation)

ï£§ ICC3/ICC4 = 40 mA (max) (Erase/Program) (1-chip operation)

ICC3/ICC4 = 80 mA (max) (Erase/Program) (2-chip operation)

ï£§ ISB3 = 20 ÂµA (max) (Deep standby) (1-chip operation)

ISB3 = 40 ÂµA (max) (Deep standby) (2-chip operation)

â¢ The following architecture is required for data reliability.

ï£§ Error correction: more than 3-bit error correction per each sector read

ï£§ Spare sectors: 1.8% (579 sectors)/chip (min) within usable sectors

Ordering Information

Type No.

HN29V102414T-50

Available sector

More than 64,226 sectors

Package

12.0 Ã 18.40 mm2 0.5 mm pitch

48-pin plastic TSOP I (TFP-48DA)

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