HN29V102414 Datasheet, PDF (45/48 Pages) Renesas Technology Corp – 1G AND type Flash Memory More than 32,113-sector (542,581,248-bit) x 2

HN29V102414 Series
For Errors in program or erase operations
The device may fail during a program or erase operation. Failure mode can be confirmed by read out the
status register after complete the erase and program operations. There are two failure modes specified by
each codes:
1: Status register error flag: I/O6 = V_OL
Replace sector under the “Spare Sectors Replacement Flow at Status Register I/O6 Read”. Replacement must
be applied to one sector(2k bytes) which contains failure bits.
2: Status register error flag: I/O6 = V_OH
Escape the program data temporary under the “Replacement Flow at Status Register I/O6 Read”. If failure
data can be corrected by ECC, do not replace to spare sector. If failure data can not be corrected by ECC,
replace to spare sector. Replacement must be applied to one sector(2k bytes) which contains failure bits.
START
Program start
Program end
Set an usable sector
Check RDY/Busy
Check status: Status register read
Check I/O6: I/O6 output monitor
Check ECC: Correct by ECC?
Check status
Yes
No
Check I/O6
VOH
VOL
Sector Replacement
Program end
Escape program deta*¹
Read error sector
No
Check status
Yes
Check ECC
Yes
No _{Sector Replacement}
Program end
END
No
Check status
Yes
Note: 1. Refer to 'Spare sector replacement flow after program error' to escape the deta.
Spare Sectors Replacement Flow at Status Register I/O6 Read
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