HN58C1001 Datasheet, PDF (6/24 Pages) Hitachi Semiconductor – 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function

HN58C1001 Series
AC Characteristics (Ta = 0 to +70°C, V_CC = 5.0 V ± 10%)
Test Conditions
• Input pulse levels: 0.4 V to 2.4 V
0 V to V_CC (RES pin)
• Input rise and fall time: ≤ 20 ns
• Output load: 1TTL Gate +100 pF
• Reference levels for measuring timing: 0.8 V, 2.0 V
Read Cycle
HN58C1001-15
Parameter
Symbol Min
Max
Address to output delay
t_ACC

150
CE to output delay
t_CE

150
OE to output delay
t_OE
10
75
Address to output hold
t_OH
0

OE (CE) high to output float*¹ t_DF
0
50
RES low to output float^*1
t_DFR
0
350
RES to output delay
t_RR
0
450
Unit
ns
ns
ns
ns
ns
ns
ns
Test conditions
CE = OE = V_IL, WE = V_IH
OE = V_IL, WE = V_IH
CE = V_IL, WE = V_IH
CE = OE = V_IL, WE = V_IH
CE = V_IL, WE = V_IH
CE = OE = V_IL, WE = V_IH
CE = OE = V_IL, WE = V_IH
Rev.8.00, Nov. 27.2003, page 6 of 21