HN58C1001 Datasheet, PDF (4/24 Pages) Hitachi Semiconductor – 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function

HN58C1001 Series
Operation Table
Operation
CE
OE
WE
RES
Read
Standby
V_IL
V_IL
V_IH
V_H*¹
V_IH
×*²
×
×
Write
V_IL
V_IH
V_IL
V_H
Deselect
V_IL
V_IH
V_IH
V_H
Write Inhibit
×
×
V_IH
×
×
V_IL
×
×
Data Polling
V_IL
V_IL
V_IH
V_H
Program reset
×
×
×
V_IL
Notes: 1. Refer to the recommended DC operating conditions.
2. × : Don’t care
RDY/Busy
High-Z
High-Z
High-Z to V_OL
High-Z


V_OL
High-Z
I/O
Dout
High-Z
Din
High-Z


Dout (I/O7)
High-Z
Absolute Maximum Ratings
Parameter
Supply voltage relative to V_SS
Input voltage relative to V_SS
Operating temperature range*²
Symbol
V_CC
Vin
Topr
Value
−0.6 to +7.0
−0.5*¹ to +7.0
0 to +70
Unit
V
V
°C
Storage temperature range
Tstg
−55 to +125
°C
Notes: 1. Vin min = −3.0 V for pulse width ≤ 50 ns
2. Including electrical characteristics and data retention
Recommended DC Operating Conditions
Parameter
Symbol
Supply voltage
Input voltage
Operating temperature
V_CC
V_SS
V_IL
V_IH
V_H
Topr
Note: 1. V_IL (min): −1.0 V for pulse width ≤ 50 ns
Min
Typ
4.5
5.0
0
0
−0.3*¹

2.2

V_CC – 0.5 
0

Max
5.5
0
0.8
V_CC + 0.3
V_CC + 1.0
+70
Unit
V
V
V
V
V
°C
Rev.8.00, Nov. 27.2003, page 4 of 21