HN58C1001 Datasheet, PDF (1/24 Pages) Hitachi Semiconductor – 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function

HN58C1001 Series
1M EEPROM (128-kword × 8-bit)
Ready/Busy and RES function
REJ03C0145-0800Z
(Previous ADE-203-028G (Z) Rev.7.0)
Rev. 8.00
Nov. 27. 2003
Description
Renesas Technology's HN58C1001 is an electrically erasable and programmable ROM organized as 131072-
word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced
MNOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page
programming function to make the write operations faster.
Features
• Single supply: 5.0 V ± 10%
• Access time: 150 ns (max)
• Power dissipation
 Active: 20 mW/MHz, (typ)
 Standby: 110 µW (max)
• On-chip latches: address, data, CE, OE, WE
• Automatic byte write: 10 ms (max)
• Automatic page write (128 bytes): 10 ms (max)
• Data polling and RDY/Busy
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• 10⁴ erase/write cycles (in page mode)
• 10 years data retention
• Software data protection
• Write protection by RES pin
• There are also lead free products.
Rev.8.00, Nov. 27.2003, page 1 of 21