HN58C1001 Datasheet, PDF (17/24 Pages) Hitachi Semiconductor – 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function

HN58C1001 Series
Write/Erase Endurance and Data Retention Time
The endurance is 10⁴ cycles in case of the page programming and 10³ cycles in case of the byte programming
(1% cumulative failure rate). The data retention time is more than 10 years when a device is page-
programmed less than 10⁴ cycles.
Data Protection
To prevent this phenomenon, this device has a noise cancellation function that cuts noise if its width is 20 ns
or less in program mode.
1. Data Protection against Noise on Control Pins (CE, OE, WE) during Operation
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to
programming mode by mistake. Be careful not to allow noise of a width of more than 20 ns on the
control pins.
WE
CE
V_IH
0V
OE
V_IH
0V
20 ns max
Rev.8.00, Nov. 27.2003, page 17 of 21