HN58C1001 Datasheet, PDF (5/24 Pages) Hitachi Semiconductor – 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function

HN58C1001 Series
DC Characteristics (Ta = 0 to +70°C, V_CC = 5.0V ± 10%)
Parameter
Input leakage current
Output leakage current
Standby V_CC current
Operating V_CC current
Symbol Min
I_LI

I_LO

I_CC1

I_CC2

I_CC3

Typ
Max

2*¹

2

20

1

15


50
Output low voltage
V_OL

Output high voltage
V_OH
2.4
Notes: 1. I_LI on RES: 100 µA (max)

0.4


Unit
µA
µA
µA
mA
mA
mA
V
V
Test conditions
V_CC = 5.5 V, Vin =5.5 V
V_CC = 5.5 V, Vout = 5.5/0.4 V
CE = V_CC
CE = V_IH
Iout = 0 mA, Duty = 100%,
Cycle = 1 µs, V_CC = 5.5 V
Iout = 0 mA, Duty = 100%,
Cycle = 150 ns, V_CC = 5.5 V
I_OL = 2.1 mA
I_OH = –400 µA
Capacitance (Ta = +25°C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Input capacitance*¹
Cin


6
Output capacitance*¹
Cout


12
Note: 1. This parameter is periodically sampled and not 100% tested.
Unit Test conditions
pF Vin = 0 V
pF Vout = 0 V
Rev.8.00, Nov. 27.2003, page 5 of 21