HYB18M1G320BF Datasheet, PDF (41/62 Pages) Qimonda AG – DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM

Data Sheet
HY[B/E]18M1G320BF
1-Gbit DDR Mobile-RAM
CK
CK
t_RP
CKE
> t_RFC
FIGURE 35
Self Refresh Entry and Exit
t_XSR
t_RFC
Command PRE
Address
NOP
A10 (AP)
DQ
Pre All
High-Z
ARF
NOP
NOP
NOP
ARF
NOP
ACT
Ba A,
Row n
Row n
Enter
Self Refresh
Mode
Exit from
Self Refresh
Mode
Any Command
(Auto Refresh
Recommended)
= Don't Care
Parameter
TABLE 14
Timing Parameters for AUTO REFRESH and SELF REFRESH Commands
Symbol
- 7.5
Unit Note
min. max.
AUTO REFRESH to ACTIVE/AUTO REFRESH command period
t_RFC
75
–
ns
1)
PRECHARGE command period
t_RP
22.5 –
ns
1)
Self refresh exit to next valid command delay
t_XSR
120 –
ns
1)
Refresh period
t_REF
–
64
ms –
Average periodic refresh interval (8192 rows)
t_REFI
–
7.8
µs
2)
1) These parameters account for the number of clock cycles and depend on the operating frequency, as follows:
no. of clock cycles = specified delay / clock period; round to the next higher integer.
2) A maximum of eight AUTOREFRESH commands can be posted to the DDR Mobile-RAM device, meaning that the maximum absolute
interval between any Refresh command and the next Refresh command is 8 * tREFI.
Rev.1.00, 2007-03
41
02022006-J7N7-GYFP