HYB18M1G320BF Datasheet, PDF (25/62 Pages) Qimonda AG – DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM

Data Sheet
HY[B/E]18M1G320BF
1-Gbit DDR Mobile-RAM
FIGURE 15
Nonconsecutive READ Bursts
CK
CK
Command
Address
READ
BA,Col n
DQS
DQ
NOP
CL=2
DQS
DQ
NOP
DO n
CL=3
READ
BA,Col b
DO n
NOP
NOP
DO b
DO n (or b) = Data Out from column n (or column b)
= Don't Care
BA A Col n (b) = Bank A, Column n (b)
Burst Length = 4; 3 subsequent elements of Data Out appear in the programmed order following DO n (b)
Full-speed random READ accesses (Burst Length = 2, 4, 8 or 16) within a page (or pages) can be performed as shown in
Figure 16.
FIGURE 16
Random READ Accesses
CK
CK
Command
READ
READ
READ
READ
NOP
NOP
Address BA,Col n
DQS
BA,Col x
CL=2
BA,Col b
BA,Col g
DQ
DO n DO n' DO x DO x' DO b DO b' DO g DO g'
DQS
CL=3
DQ
DO n DO n' DO x DO x' DO b DO b'
DO n, etc. = Data Out from column n, etc.
n', x', etc. = Data Out elements, according to the programmed burst order
BA, Col n = Bank A, Column n
Burst Length = 2, 4, 8 or 16 in cases shown (if burst of 4, 8 or 16, the burst is interrupted)
Reads are to active rows in any banks
= Don't Care
Rev.1.00, 2007-03
25
02022006-J7N7-GYFP