HYB18M1G320BF Datasheet, PDF (37/62 Pages) Qimonda AG – DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM

Data Sheet
HY[B/E]18M1G320BF
1-Gbit DDR Mobile-RAM
FIGURE 30
Interrupting WRITE to PRECHARGE (max. t_DQSS)
CK
CK
Command
Address
DQS
DQ
DM
WRITE
NOP
BA,Col b
t_DQSSmax
Di b
NOP
NOP
t_WR
*2
PRE
BA a
(or all)
NOP
*1
*1
*1
*1
DI b = Data In to column b .
An interrupted burst of 4, 8 or 16 is shown, 2 data elements are written.
t_WR is referenced from the positive clock edge after the last desired Data In pair.
A10 is LOW with the WRITE command (Auto Precharge is disabled)
*1 = can be Don't Care for programmed burst length of 4
*2 = for programmed burst length of 4, DQS becomes Don't Care at this point
= Don't Care
Rev.1.00, 2007-03
37
02022006-J7N7-GYFP