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HYB25DC256163CE-4 Datasheet, PDF (3/29 Pages) Qimonda AG – 256-Mbit Double-Data-Rate SGRAM | |||
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Internet Data Sheet
1
Overview
HYB25DC256163CE
256-Mbit Double-Data-Rate SGRAM
This chapter lists all main features of the product family HYB25DC256163CE and the ordering information.
1.1
Features
⢠Double data rate architecture: two data transfers per clock cycle
⢠Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver
⢠DQS is edge-aligned with data for reads and is center-aligned with data for writes
⢠Differential clock inputs (CK and CK)
⢠Four internal banks for concurrent operation
⢠Data mask (DM) for write data
⢠DLL aligns DQ and DQS transitions with CK transitions
⢠Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
⢠Burst Lengths: 2, 4, or 8
⢠CAS Latency: 3
⢠Auto Precharge option for each burst access
⢠Auto Refresh and Self Refresh Modes
⢠7.8 µs Maximum Average Periodic Refresh Interval
⢠2.5 V (SSTL_2 compatible) I/O
⢠VDDQ = 2.5 V ± 0.2 V (DDR200, DDR266, DDR333); VDDQ = 2.6 V ± 0.1 V (DDR400, DDR500)
⢠VDD = 2.5 V ± 0.2 V (DDR200, DDR266, DDR333); VDD = 2.6 V ± 0.1 V (DDR400, DDR500)
⢠PG-TSOPII-66 package
⢠Lead- and halogene-free = green product
TABLE 1
Performance
Part Number Speed Code
â4
â5
â6
Unit
Speed Grade
Max. Clock Frequency
@CL3
fCK3
DDR500
250
DDR400B
200
DDR333
166
â
MHz
Rev. 1.1, 2007-01
3
03292006-SR4U-HULB
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