TDA8512J Datasheet, PDF (9/24 Pages) NXP Semiconductors – 26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier

Philips Semiconductors
26 W BTL and 2 × 13 W SE or
4 × 13 W SE power amplifier
Preliminary specification
TDA8512J
12 DC CHARACTERISTICS
V_P = 15 V; T_amb = 25 °C; measured according to Figs 6 and 7; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
Supply
V_P
I_q(tot)
V_O
∆V_OO
supply voltage
total quiescent current
DC output voltage
DC output offset voltage
Mode select switch
V_sw(on)
switch-on voltage
Mute condition
V
mute voltage
V_O
∆V_OO
output voltage
DC output offset voltage
Standby condition
V_stb
I_stb
I_sw(on)
standby voltage
standby current
switch-on current
note 1
note 2
6
15
−
80
−
6.9
−
−
8.5
−
3.3
−
V_i(max) = 1 V; f_i = 1 kHz −
−
note 2
−
−
0
−
−
−
−
12
Notes
1. The circuit is DC adjusted at V_P = 6 to 18 V and AC operating at V_P = 8.5 to 18 V.
2. Only for BTL channel (V_OUT4 − V_OUT3).
MAX. UNIT
18
V
160
mA
−
V
150
mV
−
V
6.4
V
2
mV
150
mV
2
V
100
µA
40
µA
13 AC CHARACTERISTICS
V_P = 15 V; f_i = 1 kHz; T_amb = 25 °C; bandpass 22 Hz to 22 kHz; measured according to Figs 6 and 7; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
BTL channel
P_o
output power
R_L2 = 4 Ω (see Fig.7); note 1
THD = 0.5%
16
20
THD = 10%
22
26
−
W
−
W
THD
B_P
total harmonic distortion
power bandwidth
P_o = 1 W
−
0.06
−
%
THD = 0.5%; P_o = −1 dB with −
20 to 15000 −
Hz
respect to 17 W
f_ro(l)
f_ro(h)
G_V
SVRR
low frequency roll-off
high frequency roll-off
closed loop voltage gain
supply voltage ripple rejection
at −1 dB; note 2
at −1 dB
note 3;
−
25
20
−
25
26
−
Hz
−
kHz
27
dB
operating
48
−
−
dB
mute
46
−
−
dB
standby
80
−
−
dB
2001 Nov 16
9