TDA8512J Datasheet, PDF (10/24 Pages) NXP Semiconductors – 26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier

Philips Semiconductors
26 W BTL and 2 × 13 W SE or
4 × 13 W SE power amplifier
Preliminary specification
TDA8512J
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
Z_i
V_n(o)
input impedance
noise output voltage
25
30
operating; R_s = 0 Ω; note 4
−
70
operating; R_s = 10 kΩ; note 4 −
100
mute; notes 4 and 5
−
60
38
kΩ
−
µV
200 µV
−
µV
SE channels
P_o
THD
f_ro(l)
f_ro(h)
G_v
SVRR
output power
R_L1 = 2 Ω (see Fig.7); note 1
THD = 0.5%
8.0 10.0
THD = 10%
11.0 13.0
R_L1 = 4 Ω (see Fig.7); note 1
THD = 0.5%
−
5.5
THD = 10%
−
7.0
total harmonic distortion
low frequency roll-off
P_o = 1 W
at −1 dB; note 2
−
0.06
−
25
high frequency roll-off
at −1 dB
20
−
closed loop voltage gain
19
20
supply voltage ripple rejection note 3;
−
W
−
W
−
W
−
W
−
%
−
Hz
−
kHz
21
dB
Z_i
V_n(o)
input impedance
noise output voltage
α_cs
∆G_V
channel separation
channel unbalance
operating
48
−
mute
46
−
standby
80
−
50
60
operating; R_s = 0 Ω; note 4
−
50
operating; R_s = 10 kΩ; note 4 −
70
mute; notes 4 and 5
−
50
R_s = 10 kΩ
40
60
−
−
−
dB
−
dB
−
dB
75
kΩ
−
µV
100 µV
−
µV
−
dB
1
dB
Notes
1. Output power is measured directly at the output pins of the device.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source impedance of 0 Ω; maximum ripple of 2 V (p-p) and at a
frequency between 100 Hz to 10 kHz.
4. Noise measured in a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage independant of R_s (V_i = 0 V).
2001 Nov 16
10