TDA8512J Datasheet, PDF (3/24 Pages) NXP Semiconductors – 26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier

Philips Semiconductors
26 W BTL and 2 × 13 W SE or
4 × 13 W SE power amplifier
Preliminary specification
TDA8512J
1 FEATURES
• Requires very few external components
• High output power
• Low output offset voltage Bridge-Tied Load (BTL)
channel
• Fixed gain
• Good ripple rejection
• Mode select switch: operating, mute and standby
• Short-circuit safe to ground and across load
• Low power dissipation in any short-circuit condition
• Thermally protected
• Reverse polarity safe
• Electrostatic discharge protection
• No switch-on and switch-off plops
• Flexible leads
• Low thermal resistance
• Identical inputs: inverting and non-inverting.
2 APPLICATIONS
• Multimedia systems
• Active speaker systems (stereo with sub woofer or
QUAD).
3 GENERAL DESCRIPTION
The TDA8512J is an integrated class-B output amplifier in
a 17-lead Single-In-Line (SIL) power package. It contains
4 × 13 W Single Ended (SE) amplifiers of which two can be
used to configure a 26 W BTL amplifier.
4 QUICK REFERENCE DATA
SYMBOL
PARAMETER
General
V_P
I_ORM
I_q(tot)
I_stb
BTL channel
P_o
SVRR
V_n(o)
Z_i
∆V_OO
SE channels
P_o
supply voltage
repetitive peak output current
total quiescent current
standby current
output power
supply voltage ripple rejection
noise output voltage
input impedance
DC output offset voltage
output power
SVRR
V_n(o)
Z_i
supply voltage ripple rejection
noise output voltage
input impedance
CONDITIONS
R_L = 4 Ω; THD = 10%
R_s = 0 Ω
THD = 10%
R_L = 4 Ω
R_L = 2 Ω
R_s = 0 Ω
MIN. TYP. MAX. UNIT
6
15
18
V
−
−
4
A
−
80
mA
−
0.1 100.0 µA
−
26
−
W
46
−
−
dB
−
70
−
µV
25
−
−
kΩ
−
−
150 mV
−
7.0 −
W
−
13.0 −
W
46
−
−
dB
−
50
−
µV
50
−
−
kΩ
5 ORDERING INFORMATION
TYPE
NUMBER
TDA8512J
NAME
DBS17P
PACKAGE
DESCRIPTION
plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
VERSION
SOT243-1
2001 Nov 16
3