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TDA8512J Datasheet, PDF (16/24 Pages) NXP Semiconductors – 26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
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Philips Semiconductors
26 W BTL and 2 × 13 W SE or
4 × 13 W SE power amplifier
Preliminary specification
TDA8512J
0
handbook, halfpage
SVRR
(dB)
− 20
MGW436
− 40
− 60
− 80
10 −2
10 −1
(1)
(2)
(3)
(4)
1
10
102
fi (kHz)
SE mode.
(1) Mute mode channel 2.
(2) Mute mode channel 1.
(3) Operating mode channel 2.
(4) Operating mode channel 1.
Fig.13 SVRR as a function of frequency at
VREF = 1 V; no bandpass applied.
10
handbook, halfpage
THD
(%)
1
MGW435
10 −1
(1)
(2)
10 −2
10 −2
10 −1
1
10
102
fi (kHz)
SE mode.
(1) RL = 4 Ω.
(2) RL = 2 Ω.
Fig.14 THD as a function of frequency at Po = 1 W;
no bandpass applied.
0
handbook, halfpage
αcs
(dB)
− 20
MGW443
− 40
− 60
− 80
10 −2
10 −1
1
10
102
fi (kHz)
SE mode.
Fig.15 Channel separation as a function of
frequency; no bandpass applied.
2001 Nov 16
20
handbook, halfpage
Po
(W)
16
12
8
MGW444
(1)
(2)
(3)
(4)
4
0
5
10
15 VP (V) 20
SE mode.
(1) RL = 2 Ω; THD = 10%.
(2) RL = 2 Ω; THD = 0.5%.
(3) RL = 4 Ω; THD = 10%.
(4) RL = 4 Ω; THD = 0.5%.
Fig.16 Output power as a function of supply
voltage.
16
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