TDA8512J Datasheet, PDF (17/24 Pages) NXP Semiconductors – 26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier

Philips Semiconductors
26 W BTL and 2 × 13 W SE or
4 × 13 W SE power amplifier
Preliminary specification
TDA8512J
handbook,¹h⁰alfpage
Pd
(W)
8
MGW445
6
(1)
4
(2)
2
0
0
4
8
12 _{Po (W)} 16
SE mode.
(1) R_L = 2 Ω.
(2) R_L = 4 Ω.
Fig.17 Power dissipation as a function of output
power at V_P = 15 V.
12
handbo_Po_dk, halfpage
(W)
10
MGW446
(1)
8
6
(2)
4
2
0
5
10
15 _{VP (V)} 20
SE mode.
(1) R_L = 2 Ω.
(2) R_L = 4 Ω.
Fig.18 Power dissipation as a function of supply
voltage.
4
handbook, halfpage
BP
(dB)
2
MGW447
0
−2
−4
10 ^−2
10 ^−1
1
10
10²
fi (kHz)
SE mode.
V_P = 15 V; R_L = 2 Ω.
P_o = 8.5 W; THD = 0.5%.
Fig.19 Power bandwidth as a function of
frequency; no bandpass applied.
2001 Nov 16
4
handbook, halfpage
BP
(dB)
2
MGW448
0
−2
−4
10 ^−2
10 ^−1
1
10
10²
fi (kHz)
BTL mode.
V_P = 15 V; R_L = 4 Ω.
P_o = 17 W; THD = 0.5%.
Fig.20 Power bandwidth as a function of
frequency; no bandpass applied.
17