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TDA8512J Datasheet, PDF (18/24 Pages) NXP Semiconductors – 26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
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Philips Semiconductors
26 W BTL and 2 × 13 W SE or
4 × 13 W SE power amplifier
Preliminary specification
TDA8512J
10
handbook, halfpage
THD
(%)
1
(1)
MGW437
10 −1
(2)
(3)
10 −2
10 −2
10 −1
1
10
102
Po (W)
BTL mode.
(1) fi = 10 kHz.
(2) fi = 1 kHz.
(3) fi = 100 Hz.
Fig.21 THD as a function of output power at
RL = 4 Ω.
10
handbook, halfpage
THD
(%)
1
MGW438
10 −1
10 −2
10 −2
10 −1
1
10
102
fi (kHz)
BTL mode.
Po = 1 W; RL = 4 Ω.
Fig.22 THD as a function of frequency; no
bandpass applied.
0
handbook, halfpage
SVRR
(dB)
− 20
MGW439
− 40
− 60
(1)
(2)
− 80
10 −2
10 −1
1
10
102
fi (kHz)
BTL mode.
(1) Operating.
(2) Mute.
Fig.23 SVRR as a function of frequency at
VREF = 1 V; no bandpass applied.
2001 Nov 16
40
handbook, halfpage
Po
(W)
30
20
10
MGW440
(1)
(2)
(3)
(4)
0
5
10
15 VP (V) 20
BTL mode.
(1) RL = 4 Ω; THD = 10%.
(2) RL = 4 Ω; THD = 0.5%.
(3) RL = 8 Ω; THD = 10%.
(4) RL = 8 Ω; THD = 0.5%.
Fig.24 Output power as a function of supply
voltage.
18
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