TDA8512J Datasheet, PDF (7/24 Pages) NXP Semiconductors – 26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier

Philips Semiconductors
26 W BTL and 2 × 13 W SE or
4 × 13 W SE power amplifier
Preliminary specification
TDA8512J
handbook, full pagewidth I(A)
current
in
output
stage
short-circuit
20 ms
50 µs
MGW430
t (s)
Fig.4 Short-circuit wave form.
9 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_P
PARAMETER
supply voltage
I_OSM
I_ORM
V_sc
V_rp
P_tot
T_stg
T_amb
T_vj
non-repetitive peak output current
repetitive peak output current
short-circuit safe voltage
reverse polarity voltage
total power dissipation
storage temperature
ambient temperature
virtual junction temperature
CONDITIONS
operating
no signal
operating; note 1
Note
1. To ground and across load.
MIN.
−
−
−
−
−
−
−
−55
−40
−
MAX. UNIT
18
V
21
V
6
A
4
A
18
V
6
V
60
W
+150 °C
+85 °C
150 °C
10 HANDLING
ESD protection of this device complies with the Philips’ General Quality Specification (GQS).
2001 Nov 16
7