PSMN020-100YS_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel 100V 20.5mΩ standard level MOSFET in LFPAK

NXP Semiconductors
PSMN020-100YS
N-channel 100V 20.5mΩ standard level MOSFET in LFPAK
60
RDSon
(mΩ)
50
VGS (V) = 4.5
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V_DS
I_D
40
5 .0
30
20
6 .5
10
10
0
15
30
45
60
ID (A)
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig. 15. Gate charge waveform definitions
Fig. 14. Drain-source on-state resistance as a function
of drain current; typical values
10
VGS
(V)
8
6
4
80 V
VDS = 50 V
20 V
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2
0
0
12
24
36
48
QG (nC)
Fig. 16. Gate-source voltage as a function of gate
charge; typical values
10⁴
C
(pF)
10³
10²
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Ciss
Coss
Crss
10
10^-1
1
10
10²
VDS (V)
Fig. 17. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN020-100YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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