 English |
|
|
|
|
|
|
|
| PSMN020-100YS_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel 100V 20.5mΩ standard level MOSFET in LFPAK | |||
| |||
| ◁ |
NXP Semiconductors
PSMN020-100YS
N-channel 100V 20.5m⦠standard level MOSFET in LFPAK
103
ID
(A)
102
Limit RDSon = VDS / ID
10
1
DC
10-1
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
003aad833
10-2
1
10
102
103
VDS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
102
IAL
(A)
aaa-010021
10
(1)
(2)
Fig. 4.
1
10-3
10-2
10-1
1
10
tAL (ms)
(1) Tj(init) = 25 °C; (2) Tj(init) = 100 °C
Avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 5
Min Typ Max Unit
-
0.63 1.42 K/W
PSMN020-100YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
4 / 14
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese