English
Language : 

PSMN020-100YS_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel 100V 20.5mΩ standard level MOSFET in LFPAK
◁
NXP Semiconductors
PSMN020-100YS
N-channel 100V 20.5mΩ standard level MOSFET in LFPAK
1
Zth(j-mb)
(K/W)
d = 0.5
0.2
10-1 0.1
0.05
0.02
10-2
single shot
003aad834
P
δ=
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
tp
t
T
10-1
tp (s)
1
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C;
voltage
Fig. 11
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 12; Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 11
IDSS
drain leakage current VDS = 100 V; VGS = 0 V; Tj = 125 °C
VDS = 100 V; VGS = 0 V; Tj = 25 °C
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 15 A; Tj = 100 °C;
resistance
Fig. 13
VGS = 10 V; ID = 15 A; Tj = 175 °C;
Fig. 13
VGS = 10 V; ID = 15 A; Tj = 25 °C;
Fig. 14
RG
internal gate
f = 1 MHz
resistance (AC)
PSMN020-100YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 March 2014
Min Typ Max Unit
90
-
-
V
100 -
-
V
0.95 -
-
V
2
3
4
V
-
-
4.6 V
-
-
100 µA
-
0.06 2
µA
-
10
100 nA
-
10
100 nA
-
-
37
mΩ
-
39
57.4 mΩ
-
15
20.5 mΩ
-
0.6 1.2 Ω
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 14
 ▷