PSMN020-100YS_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel 100V 20.5mΩ standard level MOSFET in LFPAK

NXP Semiconductors
PSMN020-100YS
N-channel 100V 20.5mΩ standard level MOSFET in LFPAK
50
ID
(A)
40
003aad836
5
V_GS(th)
(V)
4
003aad280
max
30
3
typ
20
2
min
10
1
Tj = 175 °C
Tj = 25 °C
0
0
2
4
6
VGS (V)
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
- 60
0
60
120
180
T_j (°C)
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
10^{- 1}
I_D
(A)
10^{- 2}
10^{- 3}
10^{- 4}
10^{- 5}
03aa35
min typ max
3.2
a
2.4
1.6
0.8
003aad774
10^{- 6}
0
2
4
6
V_GS (V)
Fig. 12. Sub-threshold drain current as a function of
gate-source voltage
0
-60
0
60
120
180
T_j (°C)
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN020-100YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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