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| PSMN020-100YS_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel 100V 20.5mΩ standard level MOSFET in LFPAK | |||
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NXP Semiconductors
PSMN020-100YS
N-channel 100V 20.5m⦠standard level MOSFET in LFPAK
Symbol
ID
Parameter
drain current
IDM
peak drain current
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
VGS = 10 V; Tmb = 100 °C; Fig. 2
VGS = 10 V; Tmb = 25 °C; Fig. 2
pulsed; tp ⤠10 µs; Tmb = 25 °C; Fig. 3
Tmb = 25 °C
pulsed; tp ⤠10 µs; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 43 A;
Vsup ⤠100 V; unclamped; RGS = 50 Ω;
Fig. 4
120
Pder
(%)
80
03aa16
60
ID
(A)
40
Min Max Unit
-
30
A
-
43
A
-
172 A
-55 175 °C
-55 175 °C
-
260 °C
-
43
A
-
172 A
-
103 mJ
003aad832
40
20
0
0
50
100
150
200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0
50
100
150
200
Tmb (°C)
Fig. 2. Continuous drain current as a function of
mounting base temperature
PSMN020-100YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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