PSMN020-100YS_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 100V 20.5mΩ standard level MOSFET in LFPAK

NXP Semiconductors
60
gfs
(S)
40
20
PSMN020-100YS
N-channel 100V 20.5mΩ standard level MOSFET in LFPAK
003aad837
4000
C
(pF)
3000
003aad838
Ciss
2000
Crss
1000
0
0
10
20
30
40
50
ID (A)
Fig. 6. Forward transconductance as a function of
drain current; typical values
0
0
3
6
9
12
VGS (V)
Fig. 7. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
60
RDSon
(mΩ)
50
40
30
20
003aad840
60
ID
(A)
40
20
VGS (V) =10 5.5
003aad835
5
4.5
10
4
6
8
10
VGS (V)
0
0
0 .5
1
1.5
2
VDS (V)
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Output characteristics: drain current as a
of gate-source voltage; typical values
function of drain-source voltage; typical values
PSMN020-100YS
Product data sheet
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26 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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