PSMN020-100YS_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel 100V 20.5mΩ standard level MOSFET in LFPAK

PSMN020-100YS
N-channel 100V 20.5mΩ standard level MOSFET in LFPAK
26 March 2014
Product data sheet
1. General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
• Advanced TrenchMOS provides low RDSon and low gate charge
• High efficiency gains in switching power converters
• Improved mechanical and thermal characteristics
• LFPAK provides maximum power density in a Power SO8 package
3. Applications
• DC-to-DC converters
• Lithium-ion battery protection
• Load switching
• Motor control
• Server power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V; Fig. 2
P_tot
total power dissipation T_mb = 25 °C; Fig. 1
T_j
junction temperature
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 15 A; T_j = 100 °C;
resistance
Fig. 13
V_GS = 10 V; I_D = 15 A; T_j = 25 °C;
Fig. 14
Dynamic characteristics
Q_GD
Q_G(tot)
gate-drain charge
total gate charge
V_GS = 10 V; I_D = 30 A; V_DS = 50 V;
Fig. 15; Fig. 16
Min Typ Max Unit
-
-
100 V
-
-
43
A
-
-
106 W
-55 -
175 °C
-
-
37
mΩ
-
15
20.5 mΩ
-
11.8 16.5 nC
-
41
57.4 nC
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