PMPB95ENEA_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – 80 V, single N-channel Trench MOSFET

NXP Semiconductors
10
V_GS
(V)
8
aaa-008551
6
4
2
0
0
2
4
6
8
10
Q_G (nC)
I_D = 2.8 A; V_DS = 40 V; T_amb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
4.8
I_S
(A)
3.6
PMPB95ENEA
80 V, single N-channel Trench MOSFET
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
017aaa137
Fig. 15. MOSFET transistor: Gate charge waveform
definitions
aaa-008552
2.4
1.2
T_j = 150 °C
T_j = 25 °C
V_GS = 0 V
0
0
0.4
0.8
1.2
V_SD (V)
Fig. 16. Source current as a function of source-drain voltage; typical values
PMPB95ENEA
Product data sheet
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17 December 2013
© NXP N.V. 2013. All rights reserved
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