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| PMPB95ENEA_15 Datasheet, PDF (4/15 Pages) NXP Semiconductors – 80 V, single N-channel Trench MOSFET | |||
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NXP Semiconductors
PMPB95ENEA
80 V, single N-channel Trench MOSFET
102
ID
(A)
10
Limit RDSon = VDS/ID
aaa-008542
tp = 10 µs
tp = 100 µs
1
DC; Tsp = 25 °C
10-1
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
10-2
10-1
1
IDM = single pulse
tp = 1 ms
tp = 10 ms
tp = 100 ms
10
102
VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
in free air; t ⤠5 s
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1]
-
239 275 K/W
[2]
-
67
77
K/W
[2]
-
33
38
K/W
-
4
8
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMPB95ENEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 December 2013
© NXP N.V. 2013. All rights reserved
4 / 15
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