PMPB95ENEA_15 Datasheet, PDF (2/15 Pages) NXP Semiconductors – 80 V, single N-channel Trench MOSFET

NXP Semiconductors
PMPB95ENEA
80 V, single N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
D
drain
2
D
drain
3
G
gate
4
S
source
5
D
drain
6
D
drain
7
D
drain
8
S
source
Simplified outline
Graphic symbol
1
6
7
2
5
G
3
8
4
Transparent top view
DFN2020MD-6 (SOT1220)
D
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMPB95ENEA
DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220
package; no leads; 6 terminals
7. Marking
Table 4. Marking codes
Type number
PMPB95ENEA
Marking code
2A
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
drain-source voltage
T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = 10 V; T_amb = 25 °C; t ≤ 5 s
[1]
V_GS = 10 V; T_amb = 25 °C
[1]
V_GS = 10 V; T_amb = 100 °C
[1]
I_DM
peak drain current
T_amb = 25 °C; single pulse; t_p ≤ 10 µs
Min Max Unit
-
80
V
-20 20
V
-
4.1 A
-
2.8 A
-
1.8 A
-
11.2 A
PMPB95ENEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 December 2013
© NXP N.V. 2013. All rights reserved
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