PMPB95ENEA_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – 80 V, single N-channel Trench MOSFET

NXP Semiconductors
PMPB95ENEA
80 V, single N-channel Trench MOSFET
14
I_D
(A)
12
10
aaa-008547
2.1
a
1.7
aaa-008548
8
1.3
6
4
T_j = 150 °C
T_j = 25 °C
0.9
2
0
0
1
2
V_DS > I_D × R_DSon
3
4
V_GS (V)
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.5
-60
0
60
120
180
T_j (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
3.5
V_GS(th)
(V)
3.0
2.5
max
aaa-008549
10³
C
(pF)
aaa-008550
C_iss
2.0
typ
1.5
min
1.0
0.5
10²
C_oss
C_rss
0
-60
0
60
I_D = 0.25 mA; V_DS = V_GS
120
180
T_j (°C)
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
10
10^-1
1
f = 1 MHz; V_GS = 0 V
10
10²
V_DS (V)
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMPB95ENEA
Product data sheet
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17 December 2013
© NXP N.V. 2013. All rights reserved
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