PMPB95ENEA_15 Datasheet, PDF (3/15 Pages) NXP Semiconductors – 80 V, single N-channel Trench MOSFET

NXP Semiconductors
PMPB95ENEA
80 V, single N-channel Trench MOSFET
Symbol
Parameter
Conditions
E_DS(AL)S
non-repetitive drain-source
avalanche energy
T_j(init) = 25 °C; I_D = 0.46 A; DUT in
avalanche (unclamped)
P_tot
total power dissipation
T_amb = 25 °C
T_amb = 25 °C; t ≤ 5 s
T_sp = 25 °C
T_j
junction temperature
T_amb
ambient temperature
T_stg
storage temperature
Source-drain diode
I_S
source current
T_amb = 25 °C
ESD maximum rating
V_ESD
electrostatic discharge voltage HBM
Min Max Unit
-
19.3 mJ
[1]
-
1.6 W
[1]
-
3.3 W
-
15.6 W
-55 150 °C
-55 150 °C
-65 150 °C
[1]
-
1.2 A
[2]
-
2000 V
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
[2] Measured between all pins.
120
017aaa123
120
017aaa124
P_der
I_der
(%)
(%)
80
80
40
40
0
- 75
- 25
25
75
125
175
T_j (°C)
Fig. 1. Normalized total power dissipation as a
function of junction temperature
0
- 75
- 25
25
75
125
175
T_j (°C)
Fig. 2. Normalized continuous drain current as a
function of junction temperature
PMPB95ENEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 December 2013
© NXP N.V. 2013. All rights reserved
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