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PMPB95ENEA_15 Datasheet, PDF (6/15 Pages) NXP Semiconductors – 80 V, single N-channel Trench MOSFET
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NXP Semiconductors
PMPB95ENEA
80 V, single N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
drain leakage current VDS = 80 V; VGS = 0 V; Tj = 25 °C
VDS = 80 V; VGS = 0 V; Tj = 150 °C
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 2.8 A; Tj = 25 °C
VGS = 10 V; ID = 2.8 A; Tj = 150 °C
VGS = 4.5 V; ID = 2.6 A; Tj = 25 °C
gfs
forward
VDS = 10 V; ID = 2.8 A; Tj = 25 °C
transconductance
RG
gate resistance
f = 1 MHz
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
VDS = 40 V; ID = 2.8 A; VGS = 10 V;
Tj = 25 °C
QGD
gate-drain charge
Ciss
input capacitance
VDS = 40 V; f = 1 MHz; VGS = 0 V;
Coss
output capacitance
Tj = 25 °C
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 40 V; ID = 2.8 A; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 1.2 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
80
-
-
V
1.3 1.7 2.7 V
-
-
1
µA
-
-
10
µA
-
-
10
µA
-
-
-10 µA
-
-
1
µA
-
-
-1
µA
-
80
105 mΩ
-
154 202 mΩ
-
92
120 mΩ
-
13.3 -
S
-
4.7 -
Ω
-
9.9 14.9 nC
-
1.2 -
nC
-
1.8 -
nC
-
504 -
pF
-
43
-
pF
-
26
-
pF
-
5
-
ns
-
4
-
ns
-
15
-
ns
-
7
-
ns
-
0.8 1.2 V
PMPB95ENEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 December 2013
© NXP N.V. 2013. All rights reserved
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