PMPB95ENEA_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 80 V, single N-channel Trench MOSFET

PMPB95ENEA
80 V, single N-channel Trench MOSFET
17 December 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Tin-plated 100 % solderable side pads for optical solder inspection
• AEC-Q101 qualified
3. Applications
• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j = 25 °C
V_GS = 10 V; T_amb = 25 °C; t ≤ 5 s
V_GS = 10 V; I_D = 2.8 A; T_j = 25 °C
Min Typ Max Unit
-
-
80
V
-20 -
20
V
[1]
-
-
4.1 A
-
80
105 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
Scan or click this QR code to view the latest information for this product