PMPB95ENEA_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – 80 V, single N-channel Trench MOSFET

NXP Semiconductors
PMPB95ENEA
80 V, single N-channel Trench MOSFET
12.4
I_D
(A)
9.3
10 V
4.5 V
3.6 V
6.2
3.1
aaa-008543
3.2 V
3V
2.8 V
10^-3
I_D
(A)
10^-4
10^-5
aaa-008544
min typ
max
V_GS = 2.5 V
0
0
1
2
3
4
5
V_DS (V)
T_j = 25 °C
10^-6
0
1
T_j = 25 °C; V_DS = 5 V
2
3
V_GS (V)
Fig. 6. Output characteristics: drain current as a
Fig. 7. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
400
aaa-008545
400
aaa-008546
R_DSon
(mΩ)
V_GS = 2.8 V
3.0 V
3.2 V
R_DSon
(mΩ)
300
300
200
200
3.6 V
T_j = 150 °C
100
0
1
5
T_j = 25 °C
4.5 V
10 V
9
13
I_D (A)
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
100
T_j = 25 °C
0
0
2.5
5.0
7.5
10.0
V_GS (V)
I_D = 2.8 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMPB95ENEA
Product data sheet
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17 December 2013
© NXP N.V. 2013. All rights reserved
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