PMN42XPEA_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – 20 V, P-channel Trench MOSFET

NXP Semiconductors
PMN42XPEA
20 V, P-channel Trench MOSFET
-5
V_GS
(V)
-4
aaa-004356
-3
-2
-1
0
0
4
8
12
Q_G (nC)
I_D = -4 A; V_DS = -10 V; T_amb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
-5
I_S
(A)
-4
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
017aaa137
Fig. 15. Gate charge waveform definitions
aaa-004357
-3
-2
-1
T_j = 150 °C
T_j = 25 °C
V_GS = 0 V
0
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
V_SD (V)
Fig. 16. Source current as a function of source-drain voltage; typical values
PMN42XPEA
Product data sheet
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21 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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