PMN42XPEA_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – 20 V, P-channel Trench MOSFET

NXP Semiconductors
PMN42XPEA
20 V, P-channel Trench MOSFET
-16
-8 V
I_D
(A)
-12
-3 V
-4.5 V
-8
-4
aaa-004348
V_GS = -2.5 V
-2.2 V
-2 V
-1.8 V
- 10^{- 3}
I_D
(A)
- 10^{- 4}
- 10^{- 5}
017aaa129
(1)
(2)
(3)
0
0
-1
-2
-3
-4
V_DS (V)
T_j = 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
- 10^{- 6}
0.0
- 0.5
T_j = 25 °C; V_DS = -3 V
(1) minimum values
(2) typical values
(3) maximum values
- 1.0
- 1.5
V_GS (V)
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
150
aaa-004349
150
aaa-004350
R_DSon
(mΩ)
-1.8 V -2 V
-2.2 V
V_GS = -2.5 V
R_DSon
(mΩ)
100
100
-3 V
T_j = 150 °C
50
-4.5 V
50
-8 V
T_j = 25 °C
0
0
-4
T_j = 25 °C
-8
-12
-16
I_D (A)
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
0
0
-2
I_D = -4 A
-4
-6
V_GS (V)
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMN42XPEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
7 / 15