PMN42XPEA_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – 20 V, P-channel Trench MOSFET

NXP Semiconductors
-16
I_D
(A)
-12
aaa-004351
T_j = 25 °C T_j = 150 °C
PMN42XPEA
20 V, P-channel Trench MOSFET
1.50
a
1.25
aaa-004352
-8
1.00
-4
T_j = 150 °C T_j = 25 °C
0.75
0
0
-1
-2
V_DS > I_D × R_DSon
-3
-4
V_GS (V)
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.50
-60
0
60
120
180
T_j (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
-1.5
V_GS(th)
(V)
-1.0
-0.5
max
typ
min
aaa-004353
10⁴
C
(pF)
10³
10²
aaa-004354
C_iss
C_oss
C_rss
0.0
-60
0
60
I_D = -0.25 mA; V_DS = V_GS
120
180
T_j (°C)
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
10
-10^-1
-1
f = 1 MHz; V_GS = 0 V
-10
-10²
V_DS (V)
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMN42XPEA
Product data sheet
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21 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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